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FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GT011N03D5EMOSFET N-CH ESD 30V 209A DFN5*6- Goford Semiconductor |
5,000 | - |
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Datasheet |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 209A (Tc) | 4.5V, 10V | 0.95mOhm @ 10A, 10V | 2.5V @ 250µA | 98 nC @ 10 V | ±18V | 6503 pF @ 15 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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G900P15D5MOSFET P-CH 150V 60A DFN5*6-8L Goford Semiconductor |
10,000 | - |
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Datasheet |
TrenchFET® | 8-PowerTDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | - | 60A (Tc) | 10V | 80mOhm @ 5A, 10V | 4V @ 250µA | - | ±20V | - | - | 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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GT1K2P15MMOSFET P-CH 150V 27A 138W TO-263 Goford Semiconductor |
1,600 | - |
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Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 27A (Tc) | 4.5V, 10V | 120mOhm @ 15A, 10V | 3V @ 250µA | 86 nC @ 10 V | ±20V | 3186 pF @ 75 V | - | 138W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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GT080N10MMOSFET N-CH 100V 70A TO-263 Goford Semiconductor |
1,600 | - |
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Datasheet |
SGT | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 70A (Tc) | 4.5V, 10V | 7.5mOhm @ 20A, 10V | 3V @ 250µA | - | ±20V | - | - | 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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GT011N03TEMOSFET N-CH ESD 30V 209A 89W TO Goford Semiconductor |
4,000 | - |
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Datasheet |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 209A (Tc) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | 2.5V @ 250µA | 98 nC @ 10 V | ±20V | 5988 pF @ 15 V | - | 89W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT060N10TMOSFET N-CH 100V 116A TO-220 Goford Semiconductor |
2,000 | - |
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Datasheet |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 116A (Tc) | 10V | 6mOhm @ 30A, 10V | 4V @ 250µA | 83 nC @ 10 V | ±20V | 5365 pF @ 50 V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT400P10MMOSFET P-CH 100V 35A TO-263 Goford Semiconductor |
1,600 | - |
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Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 35A (Tc) | 4.5V, 10V | 35mOhm @ 10A, 10V | 2.5V @ 250µA | 41 nC @ 10 V | ±20V | 3073 pF @ 50 V | - | 106W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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GT065P06D5MOSFET P-CH 60V 103A DFN5*6-8L Goford Semiconductor |
5,000 | - |
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Datasheet |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 103A (Tc) | 4.5V, 10V | 7mOhm @ -20A, -10V | 2.5V @ 250µA | 62 nC @ 10 V | ±20V | 5326 pF @ -30 V | - | 178W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
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G110N06TMOSFET N-CH 60V 110A TO-220 Goford Semiconductor |
10,000 | 0.35 |
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Datasheet |
TrenchFET® | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | - | 110A (Tc) | 4.5V, 10V | 6.4mOhm @ 20A, 10V | 2.5V @ 250µA | - | ±20V | - | - | 160W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GC11N65KMOSFET N-CH 650V 11A TO-252 Goford Semiconductor |
30,000 | 0.36 |
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Datasheet |
Cool MOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | - | ±30V | - | - | 179W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
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