86+15817455051
Kyle@hkhaochip.com
Upload BOM
FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
全部重置
应用所有
结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GT065P06TP-60V,-82A,RD(MAX)<7.5M@-10V,VTH Goford Semiconductor |
212 | - |
|
Datasheet |
SGT | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 82A (Tc) | 4.5V, 10V | 8mOhm @ 20A, 10V | 2.5V @ 250µA | 62 nC @ 10 V | ±20V | 5335 pF @ 30 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
|
GT400P10MMOSFET P-CH 100V 35A TO-263 Goford Semiconductor |
783 | - |
|
Datasheet |
SGT | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 35A (Tc) | 4.5V, 10V | 35mOhm @ 10A, 10V | 2.5V @ 250µA | 41 nC @ 10 V | ±20V | 3073 pF @ 50 V | - | 106W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
|
|
GT1K2P15D5MOSFET P-CH 150V 27A 130W 110M(M Goford Semiconductor |
3,304 | - |
|
- |
SGT | 8-PowerTDFN | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 27A (Tc) | 10V, 4.5V | 110mOhm @ 15A, 10V | 3V @ 250µA | 80 nC @ 10 V | 20V | 3213 pF @ 75 V | - | 138W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
|
|
G900P15KP-150V,-50A,RD(MAX)<80M@-10V,VTH Goford Semiconductor |
820 | - |
|
Datasheet |
TrenchFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 35A (Tc) | 10V | 80mOhm @ 5A, 10V | 4V @ 250µA | 27 nC @ 4.5 V | ±20V | 3918 pF @ 75 V | - | 198W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
|
|
G080N10TMOSFET N-CH 100V 180A TO-220 Goford Semiconductor |
114 | - |
|
Datasheet |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 180A (Tc) | 4.5V, 10V | 7.5mOhm @ 30A, 10V | 2.5V @ 250µA | 107 nC @ 4.5 V | ±20V | 13912 pF @ 50 V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
|
|
GT080N10KN100V, 75A,RD<8M@10V,VTH1V~3V, T Goford Semiconductor |
1,687 | - |
|
Datasheet |
SGT | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 65A (Tc) | 4.5V, 10V | 8mOhm @ 50A, 10V | 2.5V @ 250µA | 43 nC @ 10 V | ±20V | 2530 pF @ 50 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
|
|
GT011N03D5EMOSFET N-CH ESD 30V 209A DFN5*6- Goford Semiconductor |
4,977 | - |
|
Datasheet |
SGT | 8-PowerTDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 209A (Tc) | 4.5V, 10V | 0.95mOhm @ 10A, 10V | 2.5V @ 250µA | 98 nC @ 10 V | ±20V | 5950 pF @ 15 V | - | 89W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
|
|
G900P15D5P-150V,-60A,RD(MAX)<80M@-10V,VTH Goford Semiconductor |
1,574 | - |
|
Datasheet |
TrenchFET® | 8-PowerTDFN | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 60A (Tc) | 10V | 80mOhm @ 5A, 10V | 4V @ 250µA | 27 nC @ 10 V | ±20V | 4050 pF @ 75 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
|
|
GT100N12KN120V,65A,RD<12M@10V,VTH2.5V~3.5 Goford Semiconductor |
2,500 | - |
|
Datasheet |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 65A (Tc) | 10V | 12mOhm @ 35A, 10V | 3.5V @ 250µA | 50 nC @ 10 V | ±20V | 2911 pF @ 60 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |
|
|
GT065P06D5MOSFET P-CH 60V 103A DFN5*6-8L Goford Semiconductor |
2,579 | - |
|
Datasheet |
SGT | 8-PowerTDFN | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 103A (Tc) | 4.5V, 10V | 7mOhm @ -20A, -10V | 2.5V @ 250µA | 62 nC @ 10 V | ±20V | 5730 pF @ 30 V | - | 178W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-DFN (4.9x5.75) |
- Help you to save your cost and time.
- Reliable package for your goods.
- Fast reliable delivery to save time.
- Quality premium after-sale service.
