HONG KONG HAOCHIP TRADING CO., LIMITED

    FET, MOSFET Arrays

    制造商 Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
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    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    ALD212900SAL

    ALD212900SAL

    MOSFET 2N-CH 10.6V 0.08A 8SOIC

    Advanced Linear Devices Inc.

    5,721 1.09
    RFQ
    ALD212900SAL

    Datasheet

    EPAD®, Zero Threshold™ 8-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA 14Ohm 20mV @ 20µA - 30pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Surface Mount 8-SOIC
    ALD114913PAL

    ALD114913PAL

    MOSFET 2N-CH 10.6V 8PDIP

    Advanced Linear Devices Inc.

    4,842 1.05
    RFQ
    ALD114913PAL

    Datasheet

    EPAD® 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Depletion Mode 10.6V 12mA, 3mA 500Ohm @ 2.7V 1.26V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
    ALD212902PAL

    ALD212902PAL

    MOSFET 2N-CH 10.6V 0.08A 8PDIP

    Advanced Linear Devices Inc.

    8,712 1.09
    RFQ
    ALD212902PAL

    Datasheet

    EPAD®, Zero Threshold™ 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
    ALD212904PAL

    ALD212904PAL

    MOSFET 2N-CH 10.6V 0.08A 8PDIP

    Advanced Linear Devices Inc.

    2,419 1.09
    RFQ
    ALD212904PAL

    Datasheet

    EPAD®, Zero Threshold™ 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
    ALD212908PAL

    ALD212908PAL

    MOSFET 2N-CH 10.6V 0.08A 8PDIP

    Advanced Linear Devices Inc.

    7,960 1.09
    RFQ
    ALD212908PAL

    Datasheet

    EPAD®, Zero Threshold™ 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
    ALD210802SCL

    ALD210802SCL

    MOSFET 4N-CH 10.6V 0.08A 16SOIC

    Advanced Linear Devices Inc.

    6,543 1.22
    RFQ
    ALD210802SCL

    Datasheet

    EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
    ALD210804SCL

    ALD210804SCL

    MOSFET 4N-CH 10.6V 0.08A 16SOIC

    Advanced Linear Devices Inc.

    6,836 1.22
    RFQ
    ALD210804SCL

    Datasheet

    EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW 0°C ~ 70°C (TJ) - - Surface Mount 16-SOIC
    ALD210814SCL

    ALD210814SCL

    MOSFET 4N-CH 10.6V 0.08A 16SOIC

    Advanced Linear Devices Inc.

    4,551 1.22
    RFQ

    -

    EPAD®, Zero Threshold™ 16-SOIC (0.154", 3.90mm Width) Tube Active MOSFET (Metal Oxide) 4 N-Channel, Matched Pair Logic Level Gate 10.6V 80mA - 20mV @ 10µA - - 500mW - - - Surface Mount 16-SOIC
    ALD110908PAL

    ALD110908PAL

    MOSFET 2N-CH 10.6V 8PDIP

    Advanced Linear Devices Inc.

    8,249 1.10
    RFQ
    ALD110908PAL

    Datasheet

    EPAD® 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 4.8V 820mV @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
    ALD110914PAL

    ALD110914PAL

    MOSFET 2N-CH 10.6V 8PDIP

    Advanced Linear Devices Inc.

    9,592 1.10
    RFQ
    ALD110914PAL

    Datasheet

    EPAD® 8-DIP (0.300", 7.62mm) Tube Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Matched Pair - 10.6V 12mA, 3mA 500Ohm @ 5.4V 1.42V @ 1µA - 2.5pF @ 5V 500mW 0°C ~ 70°C (TJ) - - Through Hole 8-PDIP
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