HONG KONG HAOCHIP TRADING CO., LIMITED

    FET, MOSFET Arrays

    制造商 Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    GE12047BCA3

    GE12047BCA3

    MOSFET 2N-CH 1200V 475A

    GE Aerospace

    4,201 215.40
    RFQ
    GE12047BCA3

    Datasheet

    SiC Power Module Box Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 475A 4.4mOhm @ 475A, 20V 4.5V @ 160mA 1248nC @ 18V 29300pF @ 600V 1250W -55°C ~ 150°C (Tc) - - Chassis Mount -
    GE12047CCA3

    GE12047CCA3

    MOSFET 2N-CH 1200V 475A MODULE

    GE Aerospace

    3,881 215.40
    RFQ
    GE12047CCA3

    Datasheet

    SiC Power Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 475A 4.4mOhm @ 475A, 20V 4.5V @ 160mA 1248nC @ 18V 29300pF @ 600V 1250W -55°C ~ 150°C (Tc) - - Chassis Mount Module
    GE17042CCA3

    GE17042CCA3

    MOSFET 2N-CH 1700V 425A MODULE

    GE Aerospace

    2,364 252.40
    RFQ
    GE17042CCA3

    Datasheet

    SiC Power Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1700V (1.7kV) 425A (Tc) 4.45mOhm @ 425A, 20V 4.5V @ 160mA 1207nC @ 18V 29100pF @ 900V 1250W 175°C (TJ) - - Chassis Mount Module
    GE17042BCA3

    GE17042BCA3

    MOSFET 2N-CH 1700V 425A MODULE

    GE Aerospace

    3,416 252.40
    RFQ
    GE17042BCA3

    Datasheet

    SiC Power Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1700V (1.7kV) 425A (Tc) 4.45mOhm @ 425A, 20V 4.5V @ 160mA 1207nC @ 18V 29100pF @ 900V 1250W 175°C (TJ) - - Chassis Mount Module
    GE17045EEA3

    GE17045EEA3

    MOSFET 6N-CH 1700V 425A

    GE Aerospace

    6,428 757.00
    RFQ
    GE17045EEA3

    Datasheet

    SiC Power Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1700V (1.7kV) 425A (Tc) 4.45mOhm @ 425A, 20V 4.5V @ 160mA 1207nC @ 18V 29100pF @ 900V 1250W (Tc) -55°C ~ 150°C (Tc) - - Chassis Mount -
    GE12050EEA3

    GE12050EEA3

    MOSFET 6N-CH 1200V 475A MODULE

    GE Aerospace

    6,824 -
    RFQ
    GE12050EEA3

    Datasheet

    SiC Power Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 475A (Tc) 4.4mOhm @ 475A, 20V 4.5V @ 160mA 1248nC @ 18V 29300pF @ 600V 1250W (Tc) -55°C ~ 150°C (Tc) - - Chassis Mount Module
    GE17140CEA3

    GE17140CEA3

    MOSFET 2N-CH 1700V 1.275KA MODUL

    GE Aerospace

    3,899 -
    RFQ
    GE17140CEA3

    Datasheet

    SiC Power Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1700V (1.7kV) 1.275kA - 4.5V @ 480mA 3621nC @ 18V 82nF @ 600V 3.75kW -55°C ~ 150°C (Tc) - - Chassis Mount Module
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